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| SSBR20100CT SSBR20100CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2x10A 100V 150C 0.8V Features and Benefits: High Junction Temperature High ESD Protection, IEC Model 10Kv High Forward & Reverse Surge capability TO220 SSBR20100CT TO220F SSBR20100CTF Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) IF(AV) IFSM IRRM TJ Tstg Symbol RJC RJC Symbol VR VF IR RMS Reverse Voltage Average Forward Current Per diode Per device Characterizes Peak Repetitive Reverse Voltage Value 100 70 10 20 180 0.5 -50~150 -50~150 Value TO220 TO220F Max 0.8 0.75 0.1 5 Unit V V mA 2 4 Unit V V A A A A Unit /W /W Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) Peak Repetitive Reverse Surge Current(Tp=2us) Maximum operation Junction Temperature Range Storage Temperature Range Characterizes Maximum Thermal Resistance Junction To Case Characterizes Reverse Breakdown Voltage Forward Voltage Drop Leakage Current Min 100 Typ Thermal Resistance Electrical Characterizes @TA=25 unless otherwise specified Test Condition IR=0.5mA IF=10A, TJ=25 IF=10A, TJ=125 VR=100V, TJ=25 VR=100V, TJ=125 (c)Silikron Semiconductor CO.,LTD. 2009.5.15 www.silikron.com Version : 1.0 page 1of3 SSBR20100CT SSBR20100CTF I-V Curves Figure 1Typical Forward Characteristics Figure 2Typical Reverse Characteristics (c)Silikron Semiconductor CO.,LTD. 2009.5.15 www.silikron.com Version : 1.0 page 2of3 SSBR20100CT SSBR20100CTF Mechanical Data TO220 TO220F (c)Silikron Semiconductor CO.,LTD. 2009.5.15 www.silikron.com Version : 1.0 page 3of3 |
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